冯丽萍


的个人主页 http://teacher.nwpu.edu.cn/fengliping

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基本信息 The basic information

冯丽萍

材料学院

博士研究生毕业

工学博士

教授

材料科学与工程

工作经历 Work Experience

冯丽萍,工学博士,西北工业大学教授,博士生导师。2001至2006年在西北工业大学分别获得学士、硕士和博士学位。2009年1月留在西北工业大学任教。2009年5月晋升为副教授。2010年至2011年,获法国国家科学研究中心(CNRS)项目资助,在法国弗朗士孔泰大学(Université de Franche-Comté)做博士后研究。2016年5月晋升为教授,同时被聘为博士生导师。是国家自然科学基金函评专家,是Advanced MaterialsAdvanced Functional Materials等多种国际重要学术期刊的通讯评阅人,是教育部博士硕士学位论文函评评阅人。是中国材料研究学会会员、中国电子学会会员、英国皇家化学学会会员。

教育教学 Education And Teaching

先后为本科生、硕士研究生、博士研究生开设三个层次的课程。承担本科生专业核心课程《电子材料》、《半导体材料与器件》、《半导体物理》。承担研究生专业选修课程《薄膜材料与技术》和该门课程的高水平建设工作,主编研究生课程用教材《薄膜技术与应用》,该教材已投入使用,并收到良好的教学效果。主编工信部“十二五”规划核心教材《材料物理》一部。参编英文专著《Metallic Oxynitride Thin Films by Reactive Sputtering: Processes, Properties and Applications》一部,该书已由Bentham Science Publishers国际出版社出版。

近几年,指导的张晓东等多位本科生的毕业论文被评为西北工业大学优秀本科毕业论文。指导的多位研究生连年获得崇德奖学金、三好学生标兵等荣誉称号。指导的硕士生汪志强同学获2014级优秀硕士毕业生。指导的硕士生苏杰同学2015年获校优秀硕士学位论文一等奖,并获得研究生国家奖学金。苏杰同学连续3年获博士研究生国家奖学金。指导的硕士生江婉珍同学2016年获研究生国家奖学金,2018年获校优秀硕士学位论文一等奖我相信每一个学子都是优秀的,经过精心的培育,一定能够取得优异的成绩。

 

招生信息 Admission Information

光电信息功能材料研究中心在“985”和“211”工程的支持下,已建成集微米、纳米薄膜材料与半导体光电器件的制备、加工和检测分析手段于一体的微纳加工平台。该平台已建设完成1500m2的超净室,具备多种薄膜沉积设备和各种先进的材料检测、分析仪器。欢迎具有材料学、物理学、化学、光电子学等相关背景的学生保送、报考硕士和博士研究生。课题组与法国UFC,美国西北大学,香港HKU,新加坡国立,英国Queen Mary等诸多高校建立了紧密合作关系,本实验室鼓励学生出国开展1-2年的合作研究工作。

荣誉获奖 Awards Information

      1. 2015和2016连续两年荣获西北工业大学‘华秦’奖教金一等奖。

      2. 2012年获西北工业大学‘吴亚军’优秀青年教师。

      3. 2012年获陕西省优秀留学回国人员称号。

      4. 2010年获法国国家科学研究中心博士后奖学金。

      5. 2009年获西北工业大学‘翱翔之星’称号。

      6. 2007年获国防科工委科技进步三等奖1项。

科学研究 Scientific Research

主要研究方向:

      1. 新型二维纳米薄膜材料的制备;

      2. 半导体光电器件的设计及制备;

      3. 光电催化研究及清洁能源材料的制备;

      4. 计算机模拟计算及材料性质预测。


作为项目负责人,主持的科研项目:

1. 国家自然科学基金面上项目,二维单层NbxW1-xS2两步法制备及其场效应晶体管界面调控研究,2017.1-2020.12。

2. 江苏省产学研合作基金,新型二维材料的设计与制备研究,2017.1-2019.12。

3. 凝固技术国家重点实验室基金,p型二维导电薄膜的制备及其场效应晶体管性能研究,2016.1-2018.12。

4. 国家自然科学基金面上项目,基于二维WSex:Al薄膜小尺寸场效应晶体管的载流子输运特性,2014.1-2017.12

5. 航空科学基金项目,大功率半导体激光器抗损伤增透膜系AlN/SrHfO3的设计及制备研究,2014.10-2016.10

6.  陕西省自然科学基金面上项目,SrHfON/HfN叠层栅介质载流子输运特性研究,2012.1-2014.12

7.  国家自然科学基金青年项目,新型高k栅介质SrHfON薄膜的制备与物理特性研究,2010.1-2012.12

8.  西北工业大学翱翔之星人才奖励基金,k栅介质HfSiON薄膜的物理特性研究2010.1-2012.12

9.  教育部博士点基金,磁控溅射法在蓝宝石曲面衬底上制备薄膜的膜厚均匀性研究,2009.1-2011.12

10. 航空科学基金项目,红外透明导电CuAlO薄膜的设计和制备,2008.10-2010.10。

 

 

学术成果 Academic Achievements

近年来,在Advanced Functional MaterialsNanoscaleApplied Physics Letters等国际重要期刊发表SCI收录论文100余篇,其中,物理、化学、先进功能材料领域国际顶级期刊论文40余篇。授权国家发明专利6项。


主要学术贡献:

1. 提出采用气相输运+原位硫化的两步法制备过渡金属二维层状薄膜。开发出具有P型导电特性的NbxW1-xS2二维层状薄膜实现了二维原子级单层NbxW1-xS2薄膜的均匀制备。

2. 构建了二维小尺寸P型场效应晶体管,揭示了器件载流子输运特性的变化规律,大幅提高了P型场效应晶体管的驱动性能。

3. 采用理论计算方法系统研究了二维层状材料中空位缺陷的形成机制,阐明了空位缺陷类型、空位缺陷能级对二维层状材料电子结构和电学特性的影响规律。

4. 开发出新型高k栅介质SrHfON薄膜,揭示了SrHfON/Si界面组分分布规律,阐明了多物理场耦合条件下SrHfON MOS器件栅极漏电流输运机制。


代表性学术论文:

1. Li J, Wang Z, Wen Y, et al. High-performance near-infrared photodetector based on ultrathin Bi2O2Se nanosheets. Advanced Functional Materials, 2018, 28(10): 1706437.

2. Jiang B, Zou X, Su J, et al. Impact of thickness on contact issues for pinning effect in black phosphorus field-effect transistors. Advanced Functional Materials, 2018: 1801398.

3. Feng L P, Li A, Wang P C, et al. Novel two-dimensional semiconductor SnP3 with high carrier mobility, good light absorption, and strong interlayer quantum confinement. The Journal of Physical Chemistry C, 2018, 122(42): 24359-24367.

4. Zeng W, Feng L P, Su J, et al. Layer-controlled and atomically thin WS2 films prepared by sulfurization of atomic-layer-deposited WO3 films. Journal of Alloys and Compounds, 2018, 745: 834-839.

5. Feng L, Sun H, Li A, et al. Influence of Mo-vacancy concentration on the structural, electronic and optical properties of monolayer MoS2: A first-principles study. Materials Chemistry and Physics, 2018, 209: 146-151.

6. Chu J, Wang F, Yin L, et al. High-performance ultraviolet photodetector based on a few-layered 2D NiPS3 nanosheet. Advanced Functional Materials, 2017, 27(32): 1701342.

7.Su J, Feng LP, Zeng W, et al. Controlling the electronic and geometric structures of 2D insertions to realize high performance metal/insertion-MoS2 sandwich interfaces. Nanoscale, 2017, 9(22):7429-7441.

8. Su J, Feng LP, Zheng XQ, et al. A Promising Approach for High Performance of MoS2 Nanodevice: Doping the BN Buffer Layer to Eliminate the Schottky Barriers, ACS Applied Materials & Interfaces, 2017, 9: 40940-40948.

9. Su J, Feng LP, Liu SY, et al. Non-invasively improving the Schottky barriers of metal-MoS2 interfaces: effects of atomic vacancies in a BN buffer layer. Physical Chemistry Chemical Physics, 2017, 19(31): 20582-20592.

10. Su J, Feng LP, Zhang Y, et al. Defect induced gap states in monolayer MoS2 control the Schottky barriers of Pt-mMoS2 interfaces. Applied Physics Letters, 2017, 110(16):161604.

11. Feng LP, Su J, Liu ZT. Characteristics of lateral and hybrid heterostructures based on monolayer MoS2: a computational study. Physical Chemistry Chemical Physics, 2017, 19(6):4741-4750.

12. Su J, Feng LP, Zhang Y, et al.Schottky barrier engineering via adsorbing gases at the sulfur vacancies in the metal-MoS2 interface. Nanotechnology, 2017, 28(10):105204.

13. Feng LP, Jiang WZ, Su J, et al. Performance of field-effect transistors based on NbxW1-xS2 monolayers. Nanoscale, 2016, 8(12):6507-6513.

14. Su J, Feng LP, Zhang Y, et al. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures. Physical Chemistry Chemical Physics, 2016, 18(25):16882-16889.

15. Su J, Feng LP, Zeng W, et al. Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness. Physical Chemistry Chemical Physics, 2016, 18(45):31092-31100.

16. Su J, Feng LP, Pan HX, et al. Modulating the electronic properties of monolayer MoS2 through heterostructure with monolayer gray arsenic. Materials & Design, 2016, 96:257-262.

17. Li N, Feng LP, Li DP, et al. Optical and electrical properties of Al-WS2, films via H2S sulfurization of Al-WOx. Materials & Design, 2016, 92:129-134.

18. Su J, Feng LP, Liu ZT. Heterostructure consists of monolayer MoS2 and arsenene with novel electronic and optical conductivity. RSC Advances, 2016, 6(64):59633-59638.

19. Li N, Feng LP, Su J, et al. Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and Vulcanization. RSC Advances, 2016, 6(69):64879-64884.

20. Li N, Liu ZT, Feng LP, et al. Composition and optoelectrical properties of sputtering MoSex films. Surface Engineering, 2016, 32(4):299-303.

21. Tian H, Feng LP, Liu ZT. Theoretical calculations on electronic structure and optical properties of orthorhombic SrHfO3 in Cmcm space group. Rare Metal Materials & Engineering, 2016, 45(4):881-883.

22.Feng LP, Su J, Liu ZT. Computational study of hafnium metal contacts to monolayer WSe2. Journal of Alloys and Compounds, 2015, 639: 210-214.

23. Feng LP, Su J, Li DP, et al. Tuning the electronic properties of Ti-MoS2 contacts through introducing vacancies in monolayer MoS2. Physical Chemistry Chemical Physics, 2015, 17(10): 6700-6704.

24.Li N, Liu ZT, Feng LP, et al. Effect of substrate temperature on the electrical characteristics of MoSex thin films and back-gated MoSex transistors. Journal of Alloys and Compounds, 2015, 623: 209-212.

25. Li N, Su J, Feng LP, et al. Composition and optical properties of amorphous Al-MoSexOy thin films and electrical characteristics of Al-MoSexOy field effect transistors. Vacuum, 2015, 121: 42-47.

26.Su J, Liu ZT, Feng LP, et al. Effect of temperature on thermal properties of monolayer MoS2 sheet. Journal of Alloys and Compounds, 2015, 622: 777-782.

27. Su J, Li N, Zhang YY, et al. Role of vacancies in tuning the electronic properties of Au-MoS2 contact. AIP Advances, 2015, 5(7), 077182.

28.Su J, Zhang Y, Hu Y, et al. Tuning the electronic properties of bondings in monolayer MoS2 through (Au, O) co-doping. RSC Advances, 2015, 5(83): 68085-68091.

29.Feng LP, Su J, Liu ZT. Effect of vacancies in monolayer MoS2 on electronic properties of Mo-MoS2 contacts. RSC Advances, 2015, 5(26): 20538-20544.

30.Feng LP, Su J, Liu ZT. Effect of vacancies on structural, electronic and optical properties of monolayer MoS2: A first-principles study. Journal of Alloys and Compounds, 2014, 613: 122-127.

31. Chen S, Liu ZT, Feng LP, et al. Photo luminescent properties of Ce-doped HfOxNy thin films prepared by magnetron sputtering. Applied Surface Science, 2014, 320: 699-702.

32.Feng LP, Su J, Chen S, et al. First-principles investigations on vacancy formation and electronic structures of monolayer MoS2. Materials Chemistry and Physics, 2014, 148(1-2): 5-9.

33.Feng LP, Jia RT, Liu ZT. First-Principles Study of Electronic Structure of Orthorhombic SrHfO3 under Pressure. Rare Metal Materials and Engineering, 2014, 43(11): 2619-2622.

34.Tian H, Feng LP, Liu ZT. Effect of N-2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering. Vacuum, 2014, 109: 139-143.

35.Chen S, Liu ZT, Feng LP, Zhao XR. Photoluminescent properties of undoped and Ce-doped HfO2 thin films prepared by magnetron sputtering. Journal of Luminescence, 2014, 153: 148-151.

36. Meng YQ, Liu ZT, Feng LP, Chen S. Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO2 Gate Dielectric. Chinese Physics Letters, 2014, 31(7), 077702.

37.Feng LP, Li N, Liu ZT. Effect of radio frequency power on composition, structure and optical properties of MoSex thin films. Physica B-Condensed Matter, 2014, 444: 21-26.

38.Chen S, Liu ZT, Feng LP, Che XS, Zhao XR. Effect of ytterbium inclusion in hafnium oxide on the structural and electrical properties of the high-k gate dielectric. Journal of Rare Earths, 2014, 32(6): 580-584.

39. Feng LP, Wang ZQ, Liu ZT. First-principles calculations on mechanical and elastic properties of 2H- and 3R-WS2 under pressure. Solid State Communications, 2014, 187(6):43-47.

40.Feng LP, Li N, Yang MH, et al. Effect of pressure on elastic, mechanical and electronic properties of WSe2: A first-principles study. Materials Research Bulletin, 2014, 50: 503-508.

41.Chen S, Liu ZT, Feng LP, Che XS. Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric. Journal of Materials Science-Materials in Electronics, 2014, 25(2): 749-753.

42.  Feng LP, Li N, Yang MH, et al. Effect of pressure on elastic, mechanical and electronic properties of WSe2: A first-principles study. Materials Research Bulletin, 2014, 50(2):503-508.

43. Feng LP, Li N, Tian H, et al. Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering. Journal of Materials Science, 2014, 49(4): 1875-1881.

44.Chen S, Liu ZT, Feng LP, et al. The dielectric properties enhancement due to Yb incorporation into HfO2. Applied Physics Letters, 2013, 103(13): 6466-1.

45.  Zhang YJ, Liu ZT, Zang DY, et al. Effect of annealing temperature on the microstructure and optical–electrical properties of Cu-Al-O thin films. Journal of Physics & Chemistry of Solids, 2013, 74(12):1672-1677.

46.  Feng LP, Wang ZQ, Liu ZT. First-Principles Calculations on Electronic, Chemical Bonding and Optical Properties of Cubic Hf3N4. Communications in Theoretical Physics, 2013, 59(1): 105-109.

47. Feng LP, Wang Y, Tian H, et al. Effect of annealing on composition, structure and optical properties of SrHfON thin films. Applied Surface Science, 2012, 258(24):9706–9710.

48.  Feng LP, Liu ZT, Tian H, et al. Influence of RF power on structure and electrical properties of sputtered SrHfON thin films. Materials Letters, 2012, 78(7):66–68.    

49.  Zhang Y, Liu ZT, Feng LP, et al. Effect of oxygen partial pressure on the structure and properties of Cu-Al-O thin films. Applied Surface Science, 2012, 258(258):5354–5359.

50.  Liu QJ, Liu ZT, Feng LP, et al. Study of structural, elastic, electronic and optical properties of seven SrZrO3 phases: First-principles calculations. Journal of Solid State Chemistry, 2012, 196(196):425–434.     

51.  Liu QJ, Liu ZT, Gao QQ, et al. The doping effect of N substituting for different atoms in orthorhombic SrHfO3. Journal of Materials Science, 2012, 47(7):3046-3051.

52.  Feng LP, Wang ZQ, Liu QJ, et al. Influence of Pressure on the Structural, Electronic and Mechanical Properties of Cubic SrHfO3: A First-Principles Study. Chinese Physics Letters, 2012, 29(12):127103.     

53. Liu QJ, Liu ZT, Feng LP, et al. First-principles study of electronic and optical properties of N-doped SrHfO3. Physica B Physics of Condensed Matter, 2012, 407(12):2239–2242.

54.  Feng LP, Liu ZT, Liu QJ. Structural, elastic and mechanical properties of orthorhombic SrHfO3, under pressure from first-principles calculations. Physica B Condensed Matter, 2012, 407(407):2009–2013.     

55.  Liu QJ, Liu ZT, Feng LP, et al. Orthorhombic SrHfO3, (0 0 1) surfaces: Surface structure and electronic properties with first-principles calculations. Computational & Theoretical Chemistry, 2012, 989(6):59-64.    

56.  Liu QJ, Liu ZT, Feng LP, et al. First-principles investigations on structural, elastic, electronic, and optical properties of tetragonal HfSiO4. Brazilian Journal of Physics, 2012, 42(1):20-27.