冯丽萍


的个人主页 http://teacher.nwpu.edu.cn/fengliping

  被浏览次数:11983

基本信息 The basic information

冯丽萍

材料学院

博士研究生毕业

工学博士

教授

材料科学与工程

lpfeng@nwpu.edu.cn

029-88492178

工作经历 Work Experience

冯丽萍,工学博士,西北工业大学教授,博士生导师。20012006年在西北工业大学分别获得学士、硕士和博士学位。20091月留在西北工业大学任教。20095月晋升为副教授。2010年至2011年,获法国国家科学研究中心(CNRS)项目资助,在法国弗朗士孔泰大学(Université de Franche-Comté)做博士后研究。20165月晋升为教授,同时被聘为博士生导师。是国家自然科学基金函评专家,是Advanced MaterialsApplied Surface Science 等多种国际重要学术期刊的通讯评阅人,是教育部博士硕士学位论文函评评阅人。是中国材料研究学会会员、中国电子学会会员、英国皇家化学学会会员。

教育教学 Education And Teaching

先后为本科生、硕士研究生、博士研究生开设三个层次的课程。承担本科生专业核心课程《电子材料》、《半导体材料与器件》、《半导体物理》。承担研究生专业选修课程《薄膜材料与技术》和该门课程的高水平建设工作,主编研究生课程用教材《薄膜技术与应用》,该教材已投入使用,并收到良好的教学效果。主编工信部十二五规划核心教材《材料物理》一部。参编英文专著《Metallic Oxynitride Thin Films by Reactive Sputtering: Processes, Properties and Applications》一部,该书已由Bentham Science Publishers出版社出版。

近几年,指导的张晓东等多位本科生的毕业论文被评为西北工业大学优秀本科毕业论文。指导的多位研究生连年获得崇德奖学金、三好学生标兵等荣誉称号。指导的硕士生汪志强同学获2014级优秀硕士毕业生。指导的硕士生苏杰同学2015年获校优秀硕士学位论文一等奖,并获得研究生国家奖学金。指导的硕士生江婉珍同学2016年获研究生国家奖学金。我相信每一个学子都是优秀的,经过精心的培育,一定能够取得优异的成绩。

科学研究 Scientific Research

   主要研究方向:

     1. 新型二维纳米薄膜材料的制备;

     2. 半导体光电器件的设计及制备;

     3. 光电催化及清洁能源材料的制备;

     4. 高介电常数栅介质薄膜材料的设计及制备;

   5. 计算机模拟计算及材料性质预测。


作为项目负责人,主持的科研项目:

1.国家自然科学基金面上项目,二维单层NbxW1-xS2两步法制备及其场效应晶体管界面调控研究,2017.1-2020.12

2. 江苏省产学研合作基金,新型二维材料的设计与制备研究,2017.1-2019.12

3.凝固技术国家重点实验室基金,p型二维导电薄膜的制备及其场效应晶体管性能研究,2016.1-2018.12

4.国家自然科学基金面上项目,基于二维WSex:Al薄膜小尺寸场效应晶体管的载流子输运特性,2014.1-2017.12

5.航空科学基金项目,大功率半导体激光器抗损伤增透膜系AlN/SrHfO3的设计及制备研究,2014.10-2016.10

6. 陕西省自然科学基金面上项目,SrHfON/HfN叠层栅介质载流子输运特性研究,2012.1-2014.12

7. 国家自然科学基金青年项目,新型高k栅介质SrHfON薄膜的制备与物理特性研究,2010.1-2012.12

8. 西北工业大学翱翔之星人才奖励基金,k栅介质HfSiON薄膜的物理特性研究2010.1-2012.12

9. 教育部博士点基金,磁控溅射法在蓝宝石曲面衬底上制备薄膜的膜厚均匀性研究,2009.1-2011.12

10.航空科学基金项目,红外透明导电CuAlO薄膜的设计和制备,2008.10-2010.10。

荣誉获奖 Awards Information

        1. 20152016连续两年荣获西北工业大学‘华秦’奖教金一等奖。

2. 2012年获西北工业大学‘吴亚军’优秀青年教师。

3. 2012年获陕西省优秀留学回国人员称号。

4. 2010年获法国国家科学研究中心博士后奖学金。

5. 2009年获西北工业大学‘翱翔之星’称号。

6. 2007年获国防科工委科技进步三等奖1项。

招生信息 Admission Information

光电信息功能材料研究中心在“985”和“211”工程的支持下,已建成集微米、纳米薄膜材料与半导体光电器件的制备、加工和检测分析手段于一体的微纳加工平台。该平台已建设完成1500m2的超净室,具备多种薄膜沉积设备和各种先进的材料检测、分析仪器。欢迎具有材料学、物理学、化学、光电子学等相关背景的学生保送、报考硕士和博士研究生。课题组与法国UFC,美国西北大学,香港HKU,新加坡国立,英国Queen Mary等诸多高校建立了紧密合作关系,本实验室鼓励学生出国开展1-2年的合作研究工作。

学术成果 Academic Achievements

近年来,在Advanced Functional MaterialsNanoscaleApplied Physics Letters等国际重要期刊发表SCI收录论文100余篇,其中,物理、化学、先进功能材料领域国际顶级期刊论文30余篇。授权国家发明专利6项。主要学术贡献:

1. 提出采用气相输运+原位硫化的两步法制备过渡金属二维层状薄膜。开发出具有P型导电特性的NbxW1-xS2二维层状薄膜实现了二维原子级单层NbxW1-xS2薄膜的均匀制备。

2. 构建了二维小尺寸P型场效应晶体管,揭示了器件载流子输运特性的变化规律,大幅提高了P型场效应晶体管的驱动性能。

3. 采用理论计算方法系统研究了二维层状材料中空位缺陷的形成机制,阐明了空位缺陷类型、空位缺陷能级对二维层状材料电子结构和电学特性的影响规律。

4. 开发出新型高k栅介质SrHfON薄膜,揭示了SrHfON/Si界面组分分布规律,阐明了多物理场耦合条件下SrHfON MOS器件栅极漏电流输运机制。

学术文献 Academic Literature

1. Designing high performance metal-mMoS2 interfaces by two-dimensional insertions with suitable thickness , 2016, ,DOI:10.1039/c6cp05177d, ISSN:1463-9084
2. Heterostructure consists of monolayer MoS2and arsenene with novel electronic and optical conductivity , Royal Society of Chemistry,2016,6(64),59633-59638 ,DOI:10.1039/c6ra04277e, ISSN:
3. Theoretical calculations on electronic structure and optical properties of orthorhombic SrHfO3in Cmcm space group , Rare Metals Materials and Engineering Press,2016,45(4),881-884 ,DOI:, ISSN:1002185X
4. The modulation of Schottky barriers of metal-MoS2 contacts via BN-MoS2 heterostructures , 2016,18(25),16882-9 ,DOI:10.1039/c6cp02132h, ISSN:1463-9084
5. Cmcm空间群斜方SrHfO_3的电子结构和光学性质理论计算 , 2016,45(4),881-884 ,DOI:, ISSN:1002-185X
6. Modulating the electronic properties of monolayer MoS2through heterostructure with monolayer gray arsenic , Elsevier Ltd,2016,96,257-262 ,DOI:10.1016/j.matdes.2016.02.017, ISSN:02641275
7. Performance of field-effect transistors based on Nb(x)W(1-x)S2 monolayers , Royal Society of Chemistry,2016,8(12),6507-13 ,DOI:10.1039/c6nr00380j, ISSN:2040-3372
8. Optical and electrical properties of Al-WS2 films via H2S sulfurization of Al-WOx , ELSEVIER SCI LTD,2016,92,129-134 ,DOI:10.1016/j.matdes.2015.12.011, ISSN:0261-3069
9. Improving the Properties of Sapphire by Coatings , TRANS TECH PUBLICATIONS LTD,2007,26-28,619-+ ,DOI:10.4028/www.scientific.net/AMR.26-28.619, ISSN:1022-6680
10. First principles calculations of electronic and dielectric properties of hafnium silicates , IOP PUBLISHING LTD,2010,12(1) ,DOI:10.1088/1757-899X/12/1/012013, ISSN:1757-8981
11. First-principles Calculations on Structural, Electronic, and Optical Properties of 2H-CuAlO2 , TRANS TECH PUBLICATIONS LTD,2011,197-198,487-490 ,DOI:10.4028/www.scientific.net/AMR.197-198.487, ISSN:1022-6680
12. Electronic structure, effective masses and optical properties of monoclinic HfO2 from first-principles calculations , TRANS TECH PUBLICATIONS LTD,2011,216,341-344 ,DOI:10.4028/www.scientific.net/AMR.216.341, ISSN:1022-6680
13. First-principles study on the electronic structure of N-doped orthorhombic SrHfO3 , TRANS TECH PUBLICATIONS LTD,2011,239-242,1231-1234 ,DOI:10.4028/www.scientific.net/AMR.239-242.1231, ISSN:1022-6680
14. 蓝宝石头罩增透保护膜系的制备 , 2010,5(4),319-322 ,DOI:10.3969/j.issn.2095-2783.2010.04.014, ISSN:1673-7180
15. 闪锌矿型GaX(X=P,As,Sb)电子结构和光学性质的第一性原理计算 , 2010,27(3),35-39 ,DOI:10.3969/j.issn.1672-0687.2010.03.007, ISSN:1672-0687
16. 射频磁控溅射法制备HfSiON高k薄膜的结构特性 , 2008,23(2),5-7,17 ,DOI:10.3969/j.issn.1003-1545.2008.02.002, ISSN:1003-1545
17. 闪锌矿型CdSe电子结构和光学性质的研究 , 2010,34(1),29-33 ,DOI:10.3969/j.issn.1007-791X.2010.01.006, ISSN:1007-791X
18. Si掺杂立方HfO2的电子结构和光学性质的第一性原理计算 , 2010,31(1),1-5 ,DOI:10.3969/j.issn.1672-6987.2010.01.001, ISSN:1672-6987
19. 闪锌矿型HgTe电子结构和光学性质的第一性原理计算 , 2010,32(1),84-87 ,DOI:10.3969/j.issn.1672-948X.2010.01.021, ISSN:1672-948X
20. 四方ZrO2弹性常数、电子结构和光学性质的第一性原理计算 , 2010,32(2),75-80 ,DOI:10.3969/j.issn.1672-948X.2010.02.017, ISSN:1672-948X
21. 立方SrZrO3电子结构和光学性质的研究 , 2010,34(3),194-199 ,DOI:10.3969/j.issn.1007-791X.2010.03.002, ISSN:1007-791X
22. 锐钛矿型TiO2的第一性原理研究 , 2010,31(2),111-115 ,DOI:10.3969/j.issn.1672-6987.2010.02.001, ISSN:1672-6987
23. 纤锌矿型氧化锌电子结构的第一性原理计算 , 2009,30(5),377-380 ,DOI:10.3969/j.issn.1672-6987.2009.05.001, ISSN:1672-6987
24. 六方HfB2弹性性质、电子结构和光学性质的第一性原理计算 , 2010,32(5),65-70 ,DOI:10.3969/j.issn.1672-948X.2010.05.016, ISSN:1672-948X
25. Strengthening sapphire at elevated temperatures by SiO2 films , ELSEVIER SCIENCE BV,2007,253(12),5363-5367 ,DOI:10.1016/j.apsusc.2006.12.010, ISSN:0169-4332
26. Compositional, structural and electronic characteristics of HfO2 and HfSiO dielectrics prepared by radio frequency magnetron sputtering , PERGAMON-ELSEVIER SCIENCE LTD,2009,83(5),902-905 ,DOI:10.1016/j.vacuum.2008.08.004, ISSN:0042-207X
27. Ab initio modeling of electronic and optical properties of hafnium silicates , ELSEVIER SCIENCE BV,2009,44(3),929-932 ,DOI:10.1016/j.commatsci.2008.06.025, ISSN:0927-0256
28. Infrared transmission properties of germanium carbon thin films deposited by reactive RF magnetron sputtering , PERGAMON-ELSEVIER SCIENCE LTD,2009,83(6),965-969 ,DOI:10.1016/j.vacuum.2008.11.005, ISSN:0042-207X
29. Structural and electrical properties of thin SrHfON films for high-k gate dielectric , AMER INST PHYSICS,2009,94(25) ,DOI:10.1063/1.3152779, ISSN:0003-6951
30. First-principles study of structural, optical and elastic properties of cubic HfO2 , ELSEVIER SCIENCE BV,2009,404(20),3614-3619 ,DOI:10.1016/j.physb.2009.06.061, ISSN:0921-4526
31. First-principles calculations of structural, electronic and optical properties of tetragonal SnO2 and SnO , ELSEVIER SCIENCE BV,2010,47(4),1016-1022 ,DOI:10.1016/j.commatsci.2009.11.038, ISSN:0927-0256
32. Theoretical calculations of mechanical, electronic, chemical bonding and optical properties of delafossite CuAlO2 , ELSEVIER SCIENCE BV,2010,405(8),2028-2033 ,DOI:10.1016/j.physb.2010.01.096, ISSN:0921-4526
33. Mechanical and thermodynamic properties of seven phases of SrHfO3: First-principles calculations , ELSEVIER SCIENCE BV,2010,48(3),677-679 ,DOI:10.1016/j.commatsci.2010.03.005, ISSN:0927-0256
34. First-principles study of structural, elastic, electronic, and optical properties of gamma-TeO2 , ELSEVIER SCIENCE BV,2010,405(15),3159-3163 ,DOI:10.1016/j.physb.2010.04.034, ISSN:0921-4526
35. Mechanical, electronic, chemical bonding and optical properties of cubic BaHfO3: First-principles calculations , ELSEVIER SCIENCE BV,2010,405(18),4032-4039 ,DOI:10.1016/j.physb.2010.06.051, ISSN:0921-4526
36. First-principles study of structural, elastic, electronic and optical properties of rutile GeO2 and alpha-quartz GeO2 , ELSEVIER SCIENCE BV,2010,12(10),1748-1755 ,DOI:10.1016/j.solidstatesciences.2010.07.025, ISSN:1293-2558
37. Density functional theory study of 3R-and 2H-CuAlO2 under pressure , AMER INST PHYSICS,2010,97(14) ,DOI:10.1063/1.3499659, ISSN:0003-6951
38. First-principles study of structural, electronic and optical properties of orthorhombic SrZrO3 , PERGAMON-ELSEVIER SCIENCE LTD,2010,150(41-42),2032-2035 ,DOI:10.1016/j.ssc.2010.08.011, ISSN:0038-1098
39. First-principles study of the structural, elastic and electronic properties of HfTaO3N , ELSEVIER SCIENCE BV,2010,50(1),114-117 ,DOI:10.1016/j.commatsci.2010.07.014, ISSN:0927-0256
40. Electronic and Optical Properties of Cubic SrHfO3 , IOP PUBLISHING LTD,2010,54(5),908-912 ,DOI:10.1088/0253-6102/54/5/25, ISSN:0253-6102
41. First-principles study of electronic and optical properties of Pbnm orthorhombic SrHfO3 , ELSEVIER SCIENCE BV,2010,50(2),454-458 ,DOI:10.1016/j.commatsci.2010.09.003, ISSN:0927-0256
42. Elasticity, electronic structure, chemical bonding and optical properties of monoclinic ZrO2 from first-principles , ELSEVIER SCIENCE BV,2011,406(3),345-350 ,DOI:10.1016/j.physb.2010.10.057, ISSN:0921-4526
43. Electronic structure, effective masses, mechanical and thermo-acoustic properties of cubic HfO2 under pressure , WILEY-BLACKWELL,2011,248(4),950-955 ,DOI:10.1002/pssb.201046182, ISSN:0370-1972
44. Density functional theory study of 3R-and 2H-CuAlO2 in tensile stress , ELSEVIER SCIENCE BV,2011,375(14),1608-1611 ,DOI:10.1016/j.physleta.2011.02.062, ISSN:0375-9601
45. First-principles study of structural, elastic, electronic and optical properties of orthorhombic GaPO4 , ELSEVIER SCIENCE BV,2011,13(5),1076-1082 ,DOI:10.1016/j.solidstatesciences.2011.01.015, ISSN:1293-2558
46. Calculations of structural, elastic, electronic, and optical properties of trigonal CdI2 , WILEY-V C H VERLAG GMBH,2011,248(7),1629-1633 ,DOI:10.1002/pssb.201046481, ISSN:0370-1972
47. First-principles calculations on electronic, chemical bonding and optical properties of tetragonal SrHfO3 , ELSEVIER SCIENCE BV,2011,2(3,SI),299-303 ,DOI:10.1016/j.jocs.2011.02.002, ISSN:1877-7503
48. First-principles study of structural, elastic, electronic and optical properties of orthorhombic NaAlF4 , ELSEVIER SCIENCE BV,2011,50(10),2822-2827 ,DOI:10.1016/j.commatsci.2011.04.037, ISSN:0927-0256
49. First-principles study of structural, mechanical, electronic and optical properties of 3R-and 2H-CuGaO2 , ELSEVIER SCIENCE BV,2011,406(18),3377-3382 ,DOI:10.1016/j.physb.2011.06.002, ISSN:0921-4526
50. First-Principles Calculations of Structural, Elastic and Electronic Properties of Tetragonal HfO2 under Pressure , IOP PUBLISHING LTD,2011,56(4),779-784 ,DOI:10.1088/0253-6102/56/4/31, ISSN:0253-6102
51. First-principles calculations of the structural, elastic, electronic, chemical bonding and optical properties of zinc-blende and rocksalt GeC , ELSEVIER SCIENCE BV,2011,13(12),2177-2184 ,DOI:10.1016/j.solidstatesciences.2011.10.004, ISSN:1293-2558
52. Optical and Electrical Properties of Magnetron Sputtering Deposited Cu-Al-O Thin Films , HINDAWI PUBLISHING CORPORATION,2012,2012 ,DOI:10.1155/2012/823089, ISSN:1687-5869
53. Structural and electronic properties of cubic SrHfO3 surface: First-principles calculations , ELSEVIER SCIENCE BV,2012,258(8),3455-3461 ,DOI:10.1016/j.apsusc.2011.11.097, ISSN:0169-4332
54. The doping effect of N substituting for different atoms in orthorhombic SrHfO3 , SPRINGER,2012,47(7),3046-3051 ,DOI:10.1007/s10853-011-6136-x, ISSN:0022-2461
55. First-Principles Investigations on Structural, Elastic, Electronic, and Optical Properties of Tetragonal HfSiO4 , SPRINGER,2012,42(1-2),20-27 ,DOI:10.1007/s13538-012-0067-0, ISSN:0103-9733
56. Effect of oxygen partial pressure on the structure and properties of Cu-Al-O thin films , ELSEVIER SCIENCE BV,2012,258(14),5354-5359 ,DOI:10.1016/j.apsusc.2012.02.003, ISSN:0169-4332
57. Orthorhombic SrHfO3 (001) surfaces: Surface structure and electronic properties with first-principles calculations , ELSEVIER SCIENCE BV,2012,989,59-64 ,DOI:10.1016/j.comptc.2012.03.004, ISSN:2210-271X
58. First-principles study of electronic and optical properties of N-doped SrHfO3 , ELSEVIER SCIENCE BV,2012,407(12),2239-2242 ,DOI:10.1016/j.physb.2012.03.006, ISSN:0921-4526
59. Structural, elastic and mechanical properties of orthorhombic SrHfO3 under pressure from first-principles calculations , ELSEVIER SCIENCE BV,2012,407(12),2009-2013 ,DOI:10.1016/j.physb.2012.01.130, ISSN:0921-4526
60. Influence of RF power on structure and electrical properties of sputtered SrHfON thin films , ELSEVIER SCIENCE BV,2012,78(,SI),66-68 ,DOI:10.1016/j.matlet.2012.03.024, ISSN:0167-577X
61. Effect of annealing on composition, structure and optical properties of SrHfON thin films , ELSEVIER SCIENCE BV,2012,258(24),9706-9710 ,DOI:10.1016/j.apsusc.2012.05.166, ISSN:0169-4332
62. Study of structural, elastic, electronic and optical properties of seven SrZrO3 phases: First-principles calculations , ACADEMIC PRESS INC ELSEVIER SCIENCE,2012,196,425-434 ,DOI:10.1016/j.jssc.2012.07.005, ISSN:0022-4596
63. Influence of Pressure on the Structural, Electronic and Mechanical Properties of Cubic SrHfO3: A First-Principles Study , IOP PUBLISHING LTD,2012,29(12) ,DOI:10.1088/0256-307X/29/12/127103, ISSN:0256-307X
64. First-Principles Calculations on Electronic, Chemical Bonding and Optical Properties of Cubic Hf3N4 , IOP PUBLISHING LTD,2013,59(1),105-109 ,DOI:10.1088/0253-6102/59/1/19, ISSN:0253-6102
65. The dielectric properties enhancement due to Yb incorporation into HfO2 , AMER INST PHYSICS,2013,103(13) ,DOI:10.1063/1.4821850, ISSN:0003-6951
66. Effect of annealing temperature on the microstructure and optical-electrical properties of Cu-Al-O thin films , PERGAMON-ELSEVIER SCIENCE LTD,2013,74(12),1672-1677 ,DOI:10.1016/j.jpcs.2013.05.028, ISSN:0022-3697
67. Structural and opto-electrical properties of Cu-Al-O thin films prepared by magnetron sputtering method , PERGAMON-ELSEVIER SCIENCE LTD,2014,99,160-165 ,DOI:10.1016/j.vacuum.2013.05.019, ISSN:0042-207X
68. Current conduction mechanisms in HfO2 and SrHfON thin films prepared by magnetron sputtering , SPRINGER,2014,49(4),1875-1881 ,DOI:10.1007/s10853-013-7876-6, ISSN:0022-2461
69. Influence of cerium-doping on the structural and electrical properties of hafnium oxide gate dielectric , SPRINGER,2014,25(2,SI),749-753 ,DOI:10.1007/s10854-013-1640-1, ISSN:0957-4522
70. Effect of pressure on elastic, mechanical and electronic properties of WSe2: A first-principles study , PERGAMON-ELSEVIER SCIENCE LTD,2014,50,503-508 ,DOI:10.1016/j.materresbull.2013.11.016, ISSN:0025-5408
71. First-principles calculations on mechanical and elastic properties of 2H-and 3R-WS2 under pressure , PERGAMON-ELSEVIER SCIENCE LTD,2014,187,43-47 ,DOI:10.1016/j.ssc.2014.02.012, ISSN:0038-1098
72. Effect of ytterbium inclusion in hafnium oxide on the structural and electrical properties of the high-k gate dielectric , ELSEVIER SCIENCE BV,2014,32(6),580-584 ,DOI:10.1016/S1002-0721(14)60111-3, ISSN:1002-0721
73. Effect of radio frequency power on composition, structure and optical properties of MoSex thin films , ELSEVIER SCIENCE BV,2014,444,21-26 ,DOI:10.1016/j.physb.2014.03.026, ISSN:0921-4526
74. Influence of Rapid Thermal Annealing on the Structure and Electrical Properties of Ce-Doped HfO2 Gate Dielectric , IOP PUBLISHING LTD,2014,31(7) ,DOI:10.1088/0256-307X/31/7/077702, ISSN:0256-307X
75. Photoluminescent properties of undoped and Ce-doped HfO2 thin films prepared by magnetron sputtering , ELSEVIER SCIENCE BV,2014,153,148-151 ,DOI:10.1016/.jlumin.2014.03.017, ISSN:0022-2313
76. Effect of N-2/Ar flow ratio on the structural and electrical properties of SrHfON thin films prepared by magnetron sputtering , PERGAMON-ELSEVIER SCIENCE LTD,2014,109(,SI),139-143 ,DOI:10.1016/j.vacuum.2014.07.005, ISSN:0042-207X
77. First-principles investigations on vacancy formation and electronic structures of monolayer MoS2 , ELSEVIER SCIENCE SA,2014,148(1-2),5-9 ,DOI:10.1016/j.matchemphys.2014.07.026, ISSN:0254-0584
78. Photo luminescent properties of Ce-doped HfOxNy thin films prepared by magnetron sputtering , ELSEVIER SCIENCE BV,2014,320,699-702 ,DOI:10.1016/j.apsusc.2014.09.144, ISSN:0169-4332
79. Effect of temperature on thermal properties of monolayer MoS2 sheet , ELSEVIER SCIENCE SA,2015,622,777-782 ,DOI:10.1016/j.jallcom.2014.10.191, ISSN:0925-8388
80. Effect of substrate temperature on the electrical characteristics of MoSex thin films and back-gated MoSex transistors , ELSEVIER SCIENCE SA,2015,623,209-212 ,DOI:10.1016/j.jallcom.2014.10.107, ISSN:0925-8388
81. Tuning the electronic properties of Ti-MoS2 contacts through introducing vacancies in monolayer MoS2 , ROYAL SOC CHEMISTRY,2015,17(10),6700-6704 ,DOI:10.1039/c5cp00008d, ISSN:1463-9076
82. Effect of vacancies in monolayer MoS2 on electronic properties of Mo-MoS2 contacts , ROYAL SOC CHEMISTRY,2015,5(26),20538-20544 ,DOI:10.1039/c4ra15218b, ISSN:2046-2069
83. Role of vacancies in tuning the electronic properties of Au-MoS2 contact , AMER INST PHYSICS,2015,5(7) ,DOI:10.1063/1.4927853, ISSN:2158-3226
84. Tuning the electronic properties of bondings in monolayer MoS2 through (Au, O) co-doping , ROYAL SOC CHEMISTRY,2015,5(83),68085-68091 ,DOI:10.1039/c5ra10519f, ISSN:2046-2069
85. Composition and optical properties of amorphous Al-MoSexOy thin films and electrical characteristics of Al-MoSexOy field effect transistors , PERGAMON-ELSEVIER SCIENCE LTD,2015,121,42-47 ,DOI:10.1016/j.vacuum.2015.07.014, ISSN:0042-207X
86. Effect of vacancies on structural, electronic and optical properties of monolayer MoS2: A first-principles study (vol 613, pg 122, 2014) , ELSEVIER SCIENCE SA,2015,651,143-143 ,DOI:10.1016/j.jallcom.2015.06.223, ISSN:0925-8388
87. Effects of electrodes on the filament formation in HfO2-based resistive random access memory , Rare Metals Materials and Engineering Press,2015,44(11),2642-2645 ,DOI:, ISSN:1002185X
88. HfO_2基阻变存储器的电极效应(英文) , NORTHWEST INST NONFERROUS METAL RESEARCH,2015,44(11),2642-2645 ,DOI:, ISSN:1002-185X
89. 新型高k栅介质HfSiON薄膜的制备及性能研究 , NORTHWEST INST NONFERROUS METAL RESEARCH,2008,37(11),2008-2011 ,DOI:10.3321/j.issn:1002-185X.2008.11.028, ISSN:1002-185X
90. 高K栅介质HfSi_xO_y薄膜的制备工艺与结构分析 , NORTHWEST INST NONFERROUS METAL RESEARCH,2009,38(11),2039-2042 ,DOI:10.3321/j.issn:1002-185X.2009.11.036, ISSN:1002-185X
91. 退火对磁控溅射HfSi_xO_y薄膜光学性质的影响 , 2012,32(6),0631005 ,DOI:, ISSN:0253-2239
92. SrHfON高κ栅介质薄膜的漏电特性研究 , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2013,33(8),778-782 ,DOI:10.3969/j.issn.1672-7126.2013.08.10, ISSN:1672-7126
93. Si掺杂正交相SrHfO_3电子结构与光学性质的第一性原理计算(英文) , NORTHWEST INST NONFERROUS METAL RESEARCH,2014,43(05),1079-1083 ,DOI:, ISSN:1002-185X
94. 第一性原理研究不同压力下正交相SrHfO_3的电子结构(英文) , NORTHWEST INST NONFERROUS METAL RESEARCH,2014,43(11),2619-2622 ,DOI:, ISSN:1002-185X
95. MoS_2电子结构、振动和介电性质的第一性原理计算 , NORTHWEST INST NONFERROUS METAL RESEARCH,2015,44(01),118-121 ,DOI:, ISSN:1002-185X
96. 激光金属成形定向凝固显微组织及成分偏析研究 , SCIENCE CHINA PRESS,2002,38(5),501-506 ,DOI:10.3321/j.issn:0412-1961.2002.05.011, ISSN:0412-1961
97. 蓝宝石衬底上制备SiO2薄膜的研究 , Harbin Institute of Technology,2005,13(2),131-134 ,DOI:10.3969/j.issn.1005-0299.2005.02.006, ISSN:1005-0299
98. A-La2O3电子结构和光学性质的第一性原理计算 , Editorial Board of Chinese Journal of Computational, P.O.Box 8009, Beijing, 100088, China,2010,27(5),752-758 ,DOI:10.3969/j.issn.1001-246X.2010.05.018, ISSN:1001-246X
99. 蓝宝石衬底上SiO2薄膜的制备与光学性能 , Chinese Ceramic Society,2004,32(8),1012-1015 ,DOI:10.3321/j.issn:0454-5648.2004.08.021, ISSN:0454-5648
100. Effects of annealing on the properties of SrHfON gate dielectric films , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi'an, 721014, China,2012,41(5),925-928 ,DOI:, ISSN:1002185X
101. Influence of annealing temperatures on optical properties of HfSixOy thin films prepared by magnetron sputtering , Chinese Optical Society, P.O. Box 80, Xi'an, 710068, China,2012,32(6) ,DOI:10.3788/AOS201232.0631005, ISSN:02532239
102. Study on mechanical properties of superalloy by laser rapid forming , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi'an, 721014, China,2008,37(9),1664-1668 ,DOI:, ISSN:1002185X
103. Fabrication and properties of the novel HfSiON high-k gate dielectrics films , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi'an, 721014, China,2008,37(11),2008-2011 ,DOI:, ISSN:1002185X
104. 四方晶相HfO_2电子结构和光学性质研究 , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2008,19(12),1644-1647 ,DOI:, ISSN:1005-0086
105. 立方晶相HfO2电子结构与光学性质的第一性原理计算 , Chinese Optical Society, P.O. Box 80, Xi'an, 710068, China,2008,28(11),2191-2194 ,DOI:10.3321/j.issn:0253-2239.2008.11.028, ISSN:0253-2239
106. 蓝宝石衬底表面SiO2薄膜的应力分析 , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2008,36(2),206-209 ,DOI:10.3321/j.issn:0454-5648.2008.02.015, ISSN:0454-5648
107. Preparation and structure of HfSixOy thin film for high K gate dielectrics , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi'an, 721014, China,2009,38(11),2039-2042 ,DOI:, ISSN:1002185X
108. First-Principles calculations of electronic structure and optical properties of Si-doped orthorhombic SrHfO3 , Rare Metals Materials and Engineering Press,2014,43(5),1079-1083 ,DOI:, ISSN:1002185X
109. First-principles study of electronic structure of orthorhombic SrHfO3 under pressure , Rare Metals Materials and Engineering Press,2014,43(11),2619-2622 ,DOI:, ISSN:1002185X
110. First-principles study of electronic structure, vibrational and dielectric properties of MoS2 , Rare Metals Materials and Engineering Press,2015,44(1),118-121 ,DOI:, ISSN:1002185X
111. 射频功率对Cu/Ag导电薄膜结构和性能的影响 , Northwestern Polytechnical University,2005,23(6),693-696 ,DOI:10.3969/j.issn.1000-2758.2005.06.002, ISSN:1000-2758
112. SiO2薄膜对蓝宝石表面及高温强度的改善 , SCIENCE PRESS,2006,21(1),217-222 ,DOI:10.3321/j.issn:1000-324X.2006.01.036, ISSN:1000-324X
113. 提高蓝宝石高温强度和透过率的研究 , Harbin Institute of Technology, P.O. Box 136, Harbin, 150001, China,2007,15(1),52-54 ,DOI:10.3969/j.issn.1005-0299.2007.01.013, ISSN:1005-0299
114. SiO2薄膜对蓝宝石红外透过性能的改善 , SCIENCE CHINA PRESS,2007,22(3),529-533 ,DOI:10.3321/j.issn:1000-324X.2007.03.031, ISSN:1000-324X
115. First-principles calculations of electronic structure and optical properties of c-HfO2 , Chinese Optical Society, P.O. Box 80, Xi''an, 710068, China,2008,28(11),2191-2194 ,DOI:10.3788/AOS20082811.2191, ISSN:02532239
116. Investigation of the stress of SiO2 films deposited on sapphire substrate , Chinese Ceramic Society, Baiwanzhuang, Beijing, 100831, China,2008,36(2),206-209 ,DOI:, ISSN:04545648
117. Preparation of silica thin film on sapphire and its optical properties , Chinese Ceramic Society,2004,32(8),1012-1015 ,DOI:, ISSN:04545648
118. Effect of RF power on structure and properties of Cu/Ag films , Northwestern Polytechnical University,2005,23(6),693-696 ,DOI:, ISSN:10002758
119. Effects of annealing on the properties of SrHfON gate dielectric films , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi''an, 721014, China,2012,41(5),925-928 ,DOI:, ISSN:1002185X
120. Rain erosion behavior of silicon dioxide films prepared on sapphire , Chinese Society of Metals,2005,21(6),883-886 ,DOI:, ISSN:10050302
121. Improvement of the infrared transmission of sapphire by SiO2 films , Science Press, 18,Shuangqing Street,Haidian, Beijing, 100085, China,2007,22(3),529-533 ,DOI:, ISSN:1000324X
122. Investigation of improving strength and transmission for sapphire , Harbin Institute of Technology, P.O. Box 136, Harbin, 150001, China,2007,15(1),52-54 ,DOI:, ISSN:10050299
123. Improving on surface and high-temperature strength of sapphire by SiO2 films , Science Press,2006,21(1),217-222 ,DOI:, ISSN:1000324X
124. First-principles study of electronic structure, vibrational and dielectric properties of MoS2 , Rare Metals Materials and Engineering Press,2015,44(1),118-121 ,DOI:, ISSN:1002185X
125. Assessment of the gas permeation through thin coated polymeric membranes; improvement of the gas barrier ability for hydrogen storage , Trans Tech Publications Ltd, Kreuzstrasse 10, Zurich-Durnten, CH-8635, Switzerland,2012,323-325,393-399 ,DOI:10.4028/www.scientific.net/DDF.323-325.393, ISSN:9783037853979
126. Effect of sputtering power on structure and optical properties of Cu xAlyOz films , IEEE Computer Society, 445 Hoes Lane - P.O.Box 1331, Piscataway, NJ 08855-1331, United States,2010, ,DOI:10.1109/SOPO.2010.5503995, ISSN:9781424449644
127. First-principles study of electronic structure and optical properties of A-La2O3 , Editorial Board of Chinese Journal of Computational, P.O.Box 8009, Beijing, 100088, China,2010,27(5),752-758 ,DOI:, ISSN:1001246X
128. Study of electronic structures and optical properties of tetragonal HfO2 crystal , Board of Optronics Lasers, No. 47 Yang-Liu-Qing Ying-Jian Road, Tian-Jin City, 300380, China,2008,19(12),1644-1647 ,DOI:, ISSN:10050086
129. Fabrication and properties of the novel HfSiON high-k gate dielectrics films , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi''an, 721014, China,2008,37(11),2008-2011 ,DOI:, ISSN:1002185X
130. Investigation on SiO2thin films prepared on sapphire , Harbin Institute of Technology,2005,13(2),131-134 ,DOI:, ISSN:10050299
131. Study on mechanical properties of superalloy by laser rapid forming , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi''an, 721014, China,2008,37(9),1664-1668 ,DOI:, ISSN:1002185X
132. Influence of annealing temperatures on optical properties of HfSixOy thin films prepared by magnetron sputtering , Chinese Optical Society, P.O. Box 80, Xi''an, 710068, China,2012,32(6) ,DOI:10.3788/AOS201232.0631005, ISSN:02532239
133. First-principles study of electronic structure of orthorhombic SrHfO3 under pressure , Rare Metals Materials and Engineering Press,2014,43(11),2619-2622 ,DOI:, ISSN:1002185X
134. First-Principles calculations of electronic structure and optical properties of Si-doped orthorhombic SrHfO3 , Rare Metals Materials and Engineering Press,2014,43(5),1079-1083 ,DOI:, ISSN:1002185X
135. Exploring theoretically relationships between electronic structure and optical properties of tetragonal HfO2 crystal for polarization directions (100) and (001) , Northwestern Polytechnical University, Xi''an, 710072, China,2009,27(6),806-811 ,DOI:, ISSN:10002758
136. Preparation and structure of HfSixOy thin film for high K gate dielectrics , Rare Metals Materials and Engineering Press, P.O. Box 51, Xi''an, 721014, China,2009,38(11),2039-2042 ,DOI:, ISSN:1002185X
137. 退火对栅介质SrHfON薄膜性能的影响 , NORTHWEST INST NONFERROUS METAL RESEARCH,2012,41(5),925-928 ,DOI:10.3969/j.issn.1002-185X.2012.05.036, ISSN:1002-185X
138. 四方晶相HfO2电子结构和光学性质研究 , 2008,19(12),1644-1647 ,DOI:10.3321/j.issn:1005-0086.2008.12.019, ISSN:1005-0086
139. 蓝宝石衬底上增透膜的设计与制备 , 2004,35(4),498-500 ,DOI:10.3321/j.issn:1001-9731.2004.04.034, ISSN:1001-9731
140. 闪锌矿型CdTe电子结构和光学性质的第一性原理 , 2009,26(5),615-620 ,DOI:, ISSN:1002-1175
141. 退火时间对Cu-Al-O薄膜性能影响的研究 , 2013,32(1),51-53 ,DOI:, ISSN:1003-8728
142. 压力作用下六方钛电子结构和弹性性质的第一性原理计算 , 2009,31(4),72-75 ,DOI:10.3969/j.issn.1672-948X.2009.04.018, ISSN:1672-948X
143. 提高蓝宝石高温强度的研究进展 , 2004,18(5),5-7 ,DOI:10.3321/j.issn:1005-023X.2004.05.002, ISSN:1005-023X
144. 四方晶相HfO2电子结构和弹性常数的第一性原理计算 , 2009,23(3),76-80 ,DOI:10.3969/j.issn.1005-0310.2009.03.019, ISSN:1005-0310
145. 提高蓝宝石高温强度和红外透过率的镀膜法研究 , 2006,29(5),9-12 ,DOI:10.3969/j.issn.1004-244X.2006.05.003, ISSN:1004-244X
146. 白宝石上生长SiO2薄膜的工艺 , 2005,20(3),32-35 ,DOI:10.3969/j.issn.1003-1545.2005.03.010, ISSN:1003-1545
147. 蓝宝石衬底上中波红外增透保护膜系的设计、制备及性能 , 2006, ,DOI:10.7666/d.y1190038, ISSN:
148. 蓝宝石衬底上SiO<,2>薄膜的制备工艺与性能研究 , 2004, ,DOI:10.7666/d.y584721, ISSN:
149. 蓝宝石衬底上SiO_2薄膜的制备工艺与性能研究 , 2004, ,DOI:, ISSN:
150. 一种红外透明导电薄膜及其制备方法 , 2011, ,DOI:, ISSN:
151. 一种红外透明导电薄膜及其制备方法 , 2010, ,DOI:, ISSN:
152. 一种高介电常数栅介质SrHfON薄膜及其制备方法 , 2009, ,DOI:, ISSN:
153. 氮化硅/氧化硅双层增透保护薄膜的制备方法 , 2008, ,DOI:, ISSN:
154. 蓝宝石衬底上SiOlt;,2gt;薄膜的制备工艺与性能研究 , 2004, ,DOI:10.7666/d.y584721, ISSN:
155. Characteristics of silicon dioxide films prepared on sapphire , ELSEVIER SCIENCE SA,2005,122(1),7-11 ,DOI:10.1016/j.mseb.2005.04.021, ISSN:0921-5107
156. Optical properties of silica films prepared on sapphire , TRANS TECH PUBLICATIONS LTD,2005,475-479(V),3709-3712 ,DOI:, ISSN:0255-5476
157. Optical properties of SiO2/Si3N4 films prepared on sapphire - art. no. 61491I , SPIE-INT SOC OPTICAL ENGINEERING,2006,6149,I1491-I1491 ,DOI:10.1117/12.674242, ISSN:0277-786X
158. Structural, Electronic and Optical Properties of High (Y)-Li(2)BeSiO(4): First-principles Calculations , TRANS TECH PUBLICATIONS LTD,2011,197-198,567-570 ,DOI:10.4028/www.scientific.net/AMR.197-198.567, ISSN:1022-6680
159. Effect of vacancies on structural, electronic and optical properties of monolayer MoS2: A first-principles study , Elsevier Ltd,2014,613,122-127 ,DOI:10.1016/j.jallcom.2014.06.018, ISSN:09258388
160. Study on Thermal Degradation Characteristics and Regression Rate Measurement of Paraffin-Based Fuel , MDPI AG,2015,8(9),10058-10081 ,DOI:10.3390/en80910058, ISSN:1996-1073
161. Investigation of SiO2/Si3N4 films prepared on sapphire by rf magnetron reactive sputtering , ELSEVIER SCIENCE BV,2006,252(12),4064-4070 ,DOI:10.1016/j.apsusc.2005.06.021, ISSN:0169-4332
162. Rain erosion behavior of silicon dioxide films prepared on sapphire , JOURNAL MATER SCI TECHNOL,2005,21(6),883-886 ,DOI:, ISSN:1005-0302
163. 四方晶相HfO_2在(100)和(001)方向上光学特性的理论计算 , Northwestern Polytechnical University, Xi'an, 710072, China,2009,27(6),806-811 ,DOI:10.3969/j.issn.1000-2758.2009.06.012, ISSN:1000-2758
164. 激光快速成形粉末高温合金的力学性能研究 , NORTHWEST INST NONFERROUS METAL RESEARCH,2008,37(9),1664-1668 ,DOI:10.3321/j.issn:1002-185X.2008.09.035, ISSN:1002-185X
165. Microstructure and mechanical properties of carbon fiber reinforced multilayered (PyC-SiC)(n) matrix composites , ELSEVIER SCI LTD,2015,86,55-60 ,DOI:10.1016/j.matdes.2015.07.018, ISSN:0261-3069
166. Computational study of hafnium metal contacts to monolayer WSe2 , ELSEVIER SCIENCE SA,2015,639,210-214 ,DOI:10.1016/j.jallcom.2015.03.098, ISSN:0925-8388
167. 闪锌矿型CdS电子结构和光学性质的第一性原理计算 , 2010,(04),38-44 ,DOI:, ISSN:
168. 立方CdHgSe_2电子结构和光学性质的第一性原理计算(英文) , 2010,(03),82-89 ,DOI:, ISSN:
169. Si(111)面电子结构、表面能和功函数的第一性原理研究(英文) , 2009,(02),71-77 ,DOI:, ISSN: